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A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.

H. Nho, P. Kolar, F. Hamzaoglu, Y. Wang, E. Karl, Y. Ng, U. Bhattacharya, and K. Zhang. ISSCC, page 346-347. IEEE, (2010)

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Claudia Kolar

enek Kolar

Andreas Kolar

Wonnefried Kolar

Franz Kolar

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A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.H. Nho, P. Kolar, F. Hamzaoglu, Y. Wang, E. Karl, Y. Ng, U. Bhattacharya, and K. Zhang. ISSCC, page 346-347. IEEE, (2010)A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation.P. Kolar, E. Karl, U. Bhattacharya, F. Hamzaoglu, H. Nho, Y. Ng, Y. Wang, and K. Zhang. IEEE J. Solid State Circuits, 46 (1): 76-84 (2011)A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications.Y. Wang, H. Ahn, U. Bhattacharya, T. Coan, F. Hamzaoglu, W. Hafez, C. Jan, P. Kolar, S. Kulkarni, J. Lin and 6 other author(s). ISSCC, page 324-606. IEEE, (2007)A 1.1 GHz 12 µA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications.Y. Wang, H. Ahn, U. Bhattacharya, Z. Chen, T. Coan, F. Hamzaoglu, W. Hafez, C. Jan, P. Kolar, S. Kulkarni and 7 other author(s). IEEE J. Solid State Circuits, 43 (1): 172-179 (2008)Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design.F. Hamzaoglu, Y. Wang, P. Kolar, L. Wei, Y. Ng, U. Bhattacharya, and K. Zhang. IEEE Des. Test Comput., 28 (1): 22-31 (2011)A methodology for yield-specific leakage estimation in memory.S. Chatterjee, P. Kolar, W. Chan, J. Ko, and G. Pandya. CICC, page 1-4. IEEE, (2014)A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management.Y. Wang, U. Bhattacharya, F. Hamzaoglu, P. Kolar, Y. Ng, L. Wei, Y. Zhang, K. Zhang, and M. Bohr. ISSCC, page 456-457. IEEE, (2009)A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management.Y. Wang, U. Bhattacharya, F. Hamzaoglu, P. Kolar, Y. Ng, L. Wei, Y. Zhang, K. Zhang, and M. Bohr. IEEE J. Solid State Circuits, 45 (1): 103-110 (2010)

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Disambiguation of "Kolar, Pramod"

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A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.

Please choose a person to relate this publication to

Claudia Kolar

enek Kolar

Andreas Kolar

Wonnefried Kolar

Franz Kolar

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Kolar, Pramod"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.

Please choose a person to relate this publication to

Claudia Kolar

enek Kolar

Andreas Kolar

Wonnefried Kolar

Franz Kolar

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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history of this post
URL
DOI
BibTeX
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APA
Chicago
DIN 1505
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A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.