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Statistical aspects of the degradation of LDD nMOSFETs., , , , , , , , и . Microelectron. Reliab., 42 (9-11): 1409-1413 (2002)Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper., , , , , , , , , и 3 other автор(ы). ICICDT, стр. 1-4. IEEE, (2021)Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions., , , , , , , , и . VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Thermomigration-induced void formation in Cu-interconnects - Assessment of main physical parameters., , , , , , , и . IRPS, стр. 1-7. IEEE, (2023)Role of Defects in the Reliability of HfO2/Si-Based Spacer Dielectric Stacks for Local Interconnects., , , , , и . IRPS, стр. 1-6. IEEE, (2019)De-Coupling Thermo-Migration from Electromigration Using a Dedicated Test Structure., , , , , , , , и . IRPS, стр. 1-5. IEEE, (2024)TEASE: a systematic analysis framework for early evaluation of FinFET-based advanced technology nodes., , , , , , , , , и 2 other автор(ы). DAC, стр. 24:1-24:6. ACM, (2013)Assessment of critical Co electromigration parameters., , , , , , , , и . IRPS, стр. 8. IEEE, (2022)Reliability of a DME Ru Semidamascene scheme with 16 nm wide Airgaps., , , , , , , , и . IRPS, стр. 1-6. IEEE, (2021)High-resolution SILC measurements of thin SiO2 at ultra low voltages., , , , , , , , , и . Microelectron. Reliab., 42 (9-11): 1485-1489 (2002)