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Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories., , , , and . Microelectron. Reliab., 54 (9-10): 2262-2265 (2014)A Self-referenced and regulated sensing solution for PCM with OTS selector., , , , , , and . VLSI-SoC, page 1-6. IEEE, (2021)Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction., , , , , and . Microelectron. Reliab., (2018)AC stress reliability study of a new high voltage transistor for logic memory circuits., , , , , and . IRPS, page 1-5. IEEE, (2020)True random number generation exploiting SET voltage variability in resistive RAM memory arrays., , , , , , and . NVMTS, page 1-5. IEEE, (2019)Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology., , , , , and . DTIS, page 1-4. IEEE, (2021)Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip., , , , , , , , and . IRPS, page 6. IEEE, (2018)Effect of ions presence in the SiOCH inter metal dielectric structure., , , , , , , and . ESSDERC, page 218-221. IEEE, (2013)Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability., , , , , , and . J. Low Power Electron., 8 (5): 717-724 (2012)A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array., , , , , , and . VLSI-SoC (Selected Papers), volume 661 of IFIP Advances in Information and Communication Technology, page 225-243. Springer, (2021)