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Characterization and Modeling of Gate-Induced-Drain-Leakage., , , , , , , и . IEICE Trans. Electron., 88-C (5): 829-837 (2005)A Schmitt trigger to benchmark the performance of a new zero-cost transistor., , , , , , , , и . ICECS 2022, стр. 1-4. IEEE, (2022)Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability., , , , , , и . J. Low Power Electron., 8 (5): 717-724 (2012)Effects of 1064 nm laser on MOS capacitor., , , , , , и . Microelectron. Reliab., 52 (9-10): 1816-1821 (2012)Dynamic current reduction of CMOS digital circuits through design and process optimization., , , , , , , , , и 1 other автор(ы). PATMOS, стр. 77-81. IEEE, (2015)Investigation of the effects of constant voltage stress on thin SiO2 layers using dynamic measurement protocols., , , , , , , и . Microelectron. Reliab., 52 (9-10): 1895-1900 (2012)Effect of AC stress on oxide TDDB and trapped charge in interface states., , , , и . ISIC, стр. 416-419. IEEE, (2014)MM11 based flash memory cell model including characterization procedure., , , , , , и . ISCAS, IEEE, (2006)A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology., , и . DATE, стр. 1404-1405. IEEE Computer Society, (2004)40nm SONOS Embedded Select in Trench Memory., , , , , , , , , и 3 other автор(ы). ESSDERC, стр. 21-24. IEEE, (2023)