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High power devices in wide bandgap semiconductors.. Sci. China Inf. Sci., 54 (5): 1087-1093 (2011)Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layer., , , , и . ESSDERC, стр. 361-364. IEEE, (2014)Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal., , и . ESSDERC, стр. 227-230. IEEE, (2021)Toward effective passivation of graphene to humidity sensing effects., , , , , , и . ESSDERC, стр. 299-302. IEEE, (2016)Hot-carrier degradation in single-layer double-gated graphene field-effect transistors., , , , , , , и . IRPS, стр. 2. IEEE, (2015)Bipolar Technology., и . The VLSI Handbook, CRC Press, (1999)CMOS compatible ALD high-k double slot grating couplers for on-chip optical interconnects., , , и . ESSDERC, стр. 93-96. IEEE, (2012)An integration approach for graphene double-gate transistors., , , , , , , , и . ESSDERC, стр. 250-253. IEEE, (2012)Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors., , , , , , и . ESSDERC, стр. 172-175. IEEE, (2015)PDMS-supported graphene transfer using intermediary polymer layers., , , , и . ESSDERC, стр. 309-312. IEEE, (2014)