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Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs.

, , , , and . Microelectron. Reliab., 47 (7): 1030-1035 (2007)

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Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant., , , , , , , , and . Microelectron. Reliab., 46 (9-11): 1597-1602 (2006)Implementation of diode and bipolar triggered SCRs for CDM robust ESD protection in 90 nm CMOS ASICs., , , , and . Microelectron. Reliab., 47 (7): 1030-1035 (2007)Simulation of ESD protection devices in an advanced CMOS technology using a TCAD workbench based on an ESD calibration methodology., , , , , , and . Microelectron. Reliab., 50 (9-11): 1367-1372 (2010)Optical and Electrical Testing of Latchup in I/O Interface Circuits., , , , , , , and . ITC, page 236-245. IEEE Computer Society, (2003)Reliability aspects of gate oxide under ESD pulse stress., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 49 (12): 1407-1416 (2009)Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology., , , , , , , , and . Microelectron. Reliab., 49 (12): 1417-1423 (2009)Latchup Analysis Using Emission Microscopy., , , , , , , , , and . Microelectron. Reliab., 43 (9-11): 1603-1608 (2003)Design automation to suppress cable discharge event (CDE) induced latchup in 90 nm CMOS ASICs., , , , , and . Microelectron. Reliab., 47 (7): 1069-1073 (2007)