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High-speed GaAs MESFET Digital IC Design for Optical Communication Systems., , , , and . ASP-DAC, page 1-5. IEEE, (1998)Terahertz Frequency Multiplier Operation of Two Dimensional Plasmon Resonant Photomixer., , , , and . IEICE Trans. Electron., 89-C (7): 1005-1011 (2006)Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network., , , , , , , , , and 5 other author(s). ECOC, page 1-3. IEEE, (2015)Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications, , , , , , , , , and 4 other author(s). Journal of Infrared Millimeter and Terahertz Waves, 30 (12): 1319--1337 (December 2009)Site-Selective Epitaxy of Graphene on Si Wafers., , , , , , , , , and 2 other author(s). Proc. IEEE, 101 (7): 1557-1566 (2013)High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique., , , , , , and . Proc. IEEE, 101 (7): 1603-1608 (2013)Structure-Sensitive Design for Wider Tunable Operation of Terahertz Plasmon-Resonant Photomixer., , , , and . IEICE Trans. Electron., 89-C (7): 985-992 (2006)Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs., , , and . ESSDERC, page 115-118. IEEE, (2013)A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities, , , , , and . (2016)cite arxiv:1603.00099Comment: 8 pages, 6 figures.Key Technologies for 500 MHz VLSI Test System ÜLTIMATE"., , , , and . ITC, page 108-113. IEEE Computer Society, (1988)