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Disambiguation of "Meneghini, Matteo"

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On-wafer RF stress and trapping kinetics of Fe-doped AlGaN/GaN HEMTs.

, , , , , , , , , , , , , , , , and . Microelectron. Reliab., (2018)

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Stephan Meneghini

Thomas Meneghini

Matteo Garavoglia

Matteo Rini

Marco Matteo

 

Other publications of authors with the same name

Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , and 2 other author(s). IRPS, page 11. IEEE, (2022)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , and . IRPS, page 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 4. IEEE, (2018)Charge Trapping in GaN Power Transistors: Challenges and Perspectives., , , , , , , , , and 1 other author(s). BCICTS, page 1-4. IEEE, (2021)"Hot-plugging" of LED modules: Electrical characterization and device degradation., , , , , , and . Microelectron. Reliab., 53 (9-11): 1524-1528 (2013)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)Continuous time-domain RF waveforms monitoring under overdrive stress condition of AlGaN/GaN HEMTs., , , , , , and . Microelectron. Reliab., (2016)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Long-term degradation mechanisms of mid-power LEDs for lighting applications., , , , , and . Microelectron. Reliab., 55 (9-10): 1754-1758 (2015)