From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Adaptive Supply Voltage for Low-Power Ripple-Carry and Carry-Select Adders., , и . IEICE Trans. Electron., 90-C (4): 865-876 (2007)Hardware architecture and VLSI implementation of a low-power high-performance polyphase channelizer with applications to subband adaptive filtering., , , , , , и . ICASSP (5), стр. 97-100. IEEE, (2004)7.1 256Gb 3b/cell V-NAND flash memory with 48 stacked WL layers., , , , , , , , , и 20 other автор(ы). ISSCC, стр. 130-131. IEEE, (2016)256 Gb 3 b/Cell V-nand Flash Memory With 48 Stacked WL Layers., , , , , , , , , и 19 other автор(ы). IEEE J. Solid State Circuits, 52 (1): 210-217 (2017)A 128 Gb 3b/cell V-NAND Flash Memory With 1 Gb/s I/O Rate., , , , , , , , , и 19 other автор(ы). IEEE J. Solid State Circuits, 51 (1): 204-212 (2016)Energy-efficient Hardware Architecture and VLSI Implementation of a Polyphase Channelizer with Applications to Subband Adaptive Filtering., , , , , , и . J. Signal Process. Syst., 58 (2): 125-137 (2010)7.2 A 128Gb 3b/cell V-NAND flash memory with 1Gb/s I/O rate., , , , , , , , , и 24 other автор(ы). ISSCC, стр. 1-3. IEEE, (2015)Low Power Adder with Adaptive Supply Voltage., , и . ICCD, стр. 103-106. IEEE Computer Society, (2003)A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory., , , , , , , , , и 20 other автор(ы). IEEE J. Solid State Circuits, 53 (1): 124-133 (2018)A 21 nm High Performance 64 Gb MLC NAND Flash Memory With 400 MB/s Asynchronous Toggle DDR Interface., , , , , , , , , и 12 other автор(ы). IEEE J. Solid State Circuits, 47 (4): 981-989 (2012)