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Time-Controlled and FinFET Compatible Sub-Bandgap References Using Bulk-Diodes.

, , and . IEEE Trans. Circuits Syst. II Express Briefs, 66-II (10): 1608-1612 (2019)

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A 28nm CMOS ultra-compact thermal sensor in current-mode technique., and . VLSI Circuits, page 1-2. IEEE, (2016)A No-Trim, Scaling-Friendly Thermal Sensor in 16nm FinFET Using Bulk Diodes as Sensing Elements., and . ESSCIRC, page 63-66. IEEE, (2019)Dynamic voltage and frequency scaling for neuromorphic many-core systems., , , , , , , , , and 9 other author(s). ISCAS, page 1-4. IEEE, (2017)An 8b subthreshold hybrid thermal sensor with ±1.07°C inaccuracy and single-element remote-sensing technique in 22nm FinFET., , , , and . ISSCC, page 318-320. IEEE, (2018)A Current-Mode Temperature Sensor with a ±1.56 °C Raw Error and Duty-Cycle Output in 16nm FinFET., and . ISCAS, page 1-5. IEEE, (2021)Live demonstration: Dynamic voltage and frequency scaling for neuromorphic many-core systems., , , , , , , , , and 10 other author(s). ISCAS, page 1. IEEE, (2017)Seizure prediction with long-term iEEG recordings: What can we learn from data nonstationarity?, , , and . BIBM, page 1-6. IEEE, (2021)A 40nW, Sub-IV Truly 'Digital' Reverse Bandgap Reference Using Bulk-Diodes in 16nm FinFET., , and . A-SSCC, page 99-102. IEEE, (2018)Time-Controlled and FinFET Compatible Sub-Bandgap References Using Bulk-Diodes., , and . IEEE Trans. Circuits Syst. II Express Briefs, 66-II (10): 1608-1612 (2019)A Low-Noise Sub-Bandgap Reference with a ±0.64% Untrimmed Precision in 16nm FinFET., and . A-SSCC, page 113-116. IEEE, (2019)