Author of the publication

6× Higher Restore Speed.

Z. Wang, Y. Liu, A. Lee, F. Su, C. Lo, Z. Yuan, J. Li, C. Lin, W. Chen, H. Chiu, W. Lin, Y. King, C. Lin, P. Amiri, K. Wang, M. Chang, and H. Yang. IEEE J. Solid State Circuits, 52 (10): 2769-2785 (2017)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Jung-Hsing Lin

Peh-jung Lin

Bei-Jung Lin

Lin Lin

Other publications of authors with the same name

High Density Embedded 3D Stackable Via RRAM in Advanced MCU Applications.Y. Huang, Y. Hsieh, Y. Lin, Y. Chih, E. Wang, J. Chang, Y. King, and C. Lin. VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving > 4× Faster Clock Frequency and > 6× Higher Restore Speed.Z. Wang, Y. Liu, A. Lee, F. Su, C. Lo, Z. Yuan, J. Li, C. Lin, W. Chen, H. Chiu and 7 other author(s). IEEE J. Solid State Circuits, 52 (10): 2769-2785 (2017)A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.A. Lee, C. Lo, C. Lin, W. Chen, K. Hsu, Z. Wang, F. Su, Z. Yuan, Q. Wei, Y. King and 8 other author(s). IEEE J. Solid State Circuits, 52 (8): 2194-2207 (2017)FinFET CMOS logic gates with non-volatile states for reconfigurable computing systems.Y. Chiang, W. Chien, Y. Chih, J. Chang, C. Lin, and Y. King. Integr., (2019)Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations.M. Chang, J. Wu, T. Chien, Y. Liu, T. Yang, W. Shen, Y. King, C. Lin, K. Lin, Y. Chih and 1 other author(s). IEEE J. Solid State Circuits, 50 (11): 2786-2795 (2015)7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell.C. Lin, J. Hung, W. Lin, C. Lo, Y. Chiang, H. Tsai, G. Yang, Y. King, C. Lin, T. Chen and 1 other author(s). ISSCC, page 136-137. IEEE, (2016)4.7 A 65nm ReRAM-enabled nonvolatile processor with 6× reduction in restore time and 4× higher clock frequency using adaptive data retention and self-write-termination nonvolatile logic.Y. Liu, Z. Wang, A. Lee, F. Su, C. Lo, Z. Yuan, C. Lin, Q. Wei, Y. Wang, Y. King and 5 other author(s). ISSCC, page 84-86. IEEE, (2016)

BibSonomy

Disambiguation of "Lin, Chrong Jung"

Please choose a person to relate this publication to

Jung-Hsing Lin

Peh-jung Lin

Bei-Jung Lin

Lin Lin

Lin Lin

Other publications of authors with the same name

Disambiguation