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Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (4): 746-754 (2014)Four point probe ramped voltage stress as an efficient method to understand breakdown of STT-MRAM MgO tunnel junctions., , , , , , , , and . IRPS, page 4. IEEE, (2015)The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices., , , , , , , , , and 2 other author(s). IRPS, page 5. IEEE, (2015)Two-Regime Drift in Electrolytically Gated FETs and BioFETs., , , , , , , and . IRPS, page 1-5. IEEE, (2020)Detecting Translocation of DNA Nanostructures Through Nanopores: First Steps Towards Structural Barcode Readout., , , , , , , and . EUSIPCO, page 1205-1209. IEEE, (2023)Phasor based single-molecule localization microscopy in 3D (pSMLM-3D): An algorithm for MHz localization rates using standard CPUs, , , , and . The Journal of Chemical Physics, 148 (12): 123311 (March 2018)Raw Data to Results: A Hands-On Introduction and Overview of Computational Analysis for Single-Molecule Localization Microscopy., , and . Frontiers Bioinform., (2021)