( en | de | ru )

 

Disambiguation of "Hu, Guangxi"

Author of the publication

copydeleteadd this publication to your clipboard
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.

, , , , and . ASICON, page 555-557. IEEE, (2011)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Jun Hu

Zaijun Hu

Bing Hu

Hu Wang

Ruguo Hu

 

Other publications of authors with the same name

Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs., , , , and . ASICON, page 555-557. IEEE, (2011)An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs., , , , , and . Microelectron. J., 42 (3): 515-519 (2011)Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs., , , , , and . Microelectron. J., (2016)Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs., , , , , and . Microelectron. J., 43 (11): 894-897 (2012)Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices., , , , , and . ASICON, page 249-251. IEEE, (2017)A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance., , , , , and . ASICON, page 1-4. IEEE, (2019)Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET., , , , , , and . ASICON, page 1-4. IEEE, (2013)Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study., , , , and . ASICON, page 735-738. IEEE, (2011)Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs., , , and . Microelectron. J., 42 (10): 1164-1168 (2011)Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs., , , , , and . ASICON, page 1-4. IEEE, (2015)