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A 1.4 pJ/bit, Power-Scalable 16×12 Gb/s Source-Synchronous I/O With DFE Receiver in 32 nm SOI CMOS Technology., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 50 (8): 1917-1931 (2015)A 10Gb/s 5-Tap-DFE/4-Tap-FFE Transceiver in 90nm CMOS., , , , , , , , , и 5 other автор(ы). ISSCC, стр. 213-222. IEEE, (2006)A 1.4-pJ/b, power-scalable 16×12-Gb/s source-synchronous I/O with DFE receiver in 32nm SOI CMOS technology., , , , , , , , , и 6 other автор(ы). CICC, стр. 1-4. IEEE, (2014)Wide band home phone line characterization., , , и . IEEE Trans. Consumer Electronics, 46 (1): 76-86 (2000)Development of next-generation system-on-package (SOP) technology based on silicon carriers with fine-pitch chip interconnection., , , , , , , , , и 10 other автор(ы). IBM J. Res. Dev., 49 (4-5): 725-754 (2005)45-Gb/s SiGe BiCMOS PRBS generator and PRBS checker pseudorandom bit sequence., , , , , и . CICC, стр. 313-316. IEEE, (2003)Analysis and Optimization of the Recessed Probe Launch for High Frequency Measurements of PCB Interconnects., , , , и . DATE, стр. 252-255. ACM, (2008)Wide band AC power line characterization., , , и . IEEE Trans. Consumer Electronics, 45 (4): 1087-1097 (1999)SiGe BiCMOS integrated circuits for high-speed serial communication links., , , , , , , , , и 2 other автор(ы). IBM J. Res. Dev., 47 (2-3): 259-282 (2003)A 10-Gb/s 5-Tap DFE/4-Tap FFE Transceiver in 90-nm CMOS Technology., , , , , , , , , и 5 other автор(ы). IEEE J. Solid State Circuits, 41 (12): 2885-2900 (2006)