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The evolution of standard cell libraries for future technology nodes.

, , , , , , and . Genet. Program. Evolvable Mach., 12 (3): 235-256 (2011)

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An advanced statistical compact model strategy for SRAM simulation at reduced VDD., , , , and . ESSDERC, page 205-208. IEEE, (2012)Impact of statistical parameter set selection on the statistical compact model accuracy: BSIM4 and PSP case study., , , , and . Microelectron. J., 44 (1): 7-14 (2013)Impact of Random Dopant Induced Statistical Variability on Inverter Switching Trajectories and Timing Variability., , , and . ISCAS, page 577-580. IEEE, (2009)Scalable Parallel 3D Finite Element Nonlinear Poisson Solver., , , and . EUROSIM, page 665-672. Elsevier, (1994)Evaluating the accuracy of SRAM margin simulation through large scale Monte-Carlo simulations with accurate compact models., , , , , and . ICICDT, page 29-32. IEEE, (2013)Circuit design perspectives for Ge FinFET at 10nm and beyond., , , , , , , , , and 2 other author(s). ISQED, page 57-60. IEEE, (2015)TCAD based Design-Technology Co-Optimisations in advanced technology nodes., , , , , and . VLSI-DAT, page 1-2. IEEE, (2017)Hierarchical approach to ätomistic" 3-D MOSFET simulation., , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 18 (11): 1558-1565 (1999)Quantum Corrections to the 'Atomistic' MOSFET Simulations., , , and . VLSI Design, 13 (1-4): 15-21 (2001)Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation., , , , and . VLSI Design, 8 (1-4): 313-317 (1998)