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Total ionizing dose effects in elementary devices for 180-nm flash technologies.

Z. Hu, Z. Liu, H. Shao, Z. Zhang, B. Ning, M. Chen, D. Bi, и S. Zou. Microelectron. Reliab., 51 (8): 1295-1301 (2011)

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Dawei Wang

Dawei Qi

Dawei Liu

Dawei Gou

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Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation.C. Peng, Z. Hu, Z. Zhang, H. Huang, B. Ning, и D. Bi. Microelectron. Reliab., 54 (4): 730-737 (2014)Investigation of the total dose response of partially depleted SOI nMOSFETs using TCAD simulation and experiment.H. Huang, D. Bi, и Z. Zhang. Microelectron. J., 45 (6): 759-766 (2014)Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs.B. Ning, D. Bi, H. Huang, Z. Zhang, Z. Hu, M. Chen, и S. Zou. Microelectron. Reliab., 53 (2): 259-264 (2013)A novel high-precision single-event transient hardened voltage comparator design.Y. Xie, Z. Liu, T. Xu, D. Bi, Z. Hu, Z. Zhang, и S. Zou. Int. J. Circuit Theory Appl., 51 (10): 4864-4878 (октября 2023)The impact of total ionizing radiation on body effect.B. Ning, Z. Hu, Z. Zhang, Z. Liu, M. Chen, D. Bi, и S. Zou. Microelectron. J., 42 (12): 1396-1399 (2011)Comparison of TID response in core, input/output and high voltage transistors for flash memory.Z. Liu, Z. Hu, Z. Zhang, H. Shao, M. Chen, D. Bi, B. Ning, и S. Zou. Microelectron. Reliab., 51 (6): 1148-1151 (2011)A highly stable and low-cost 12T radiation hardened SRAM cell design for aerospace application.Z. Liu, Y. Xie, T. Xu, Q. Liu, D. Bi, Z. Hu, S. Zou, и Z. Zhang. Int. J. Circuit Theory Appl., 51 (8): 3938-3948 (августа 2023)An energy-efficient level shifter based on a differential cascade voltage switch structure.H. Zhang, Z. Liu, D. Bi, Z. Zhang, Z. Xiao, и R. Dai. Int. J. Circuit Theory Appl., 51 (2): 955-962 (февраля 2023)Degradation induced by TID radiation and hot-carrier stress in 130-nm short channel PDSOI NMOSFETs.L. Dai, X. Liu, M. Zhang, L. Zhang, Z. Hu, D. Bi, Z. Zhang, и S. Zou. Microelectron. Reliab., (2017)Impact of within-wafer process variability on radiation response.Z. Hu, Z. Liu, H. Shao, Z. Zhang, B. Ning, M. Chen, D. Bi, и S. Zou. Microelectron. J., 42 (6): 883-888 (2011)

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Please choose a person to relate this publication to

Dawei Wang

Dawei Wang

Dawei Qi

Dawei Liu

Dawei Gou

Другие публикации лиц с тем же именем

Disambiguation