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Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.

C. Dai, Y. Du, Q. Shi, R. Wang, H. Zheng, W. Lu, C. Peng, L. Hao, Z. Lin, and X. Wu. Microelectron. J., (February 2023)

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Xiaofei Hao

Wenjin Hao

Jin Hao

Jun Hao

Yao Hao

Other publications of authors with the same name

Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology.P. Li, X. Wang, Y. Zhang, H. Wang, J. Lu, Q. Zhao, L. Hao, C. Peng, W. Lu, Z. Lin and 1 other author(s). Microelectron. J., (November 2023)Novel radiation-hardened latch design for space-radiation environments.Q. Zhao, H. Dong, L. Hao, X. Wang, C. Peng, and X. Wu. IEICE Electron. Express, 19 (13): 20220170 (2022)Flip Point Offset-Compensation Sense Amplifier With Sensing-Margin-Enhancement for Dynamic Random-Access Memory.L. Liu, D. Tai, B. Qiang, L. Guan, C. Peng, C. Dai, L. Hao, W. Lu, Z. Lin, Q. Zhao and 1 other author(s). IEEE Trans. Circuits Syst. II Express Briefs, 71 (4): 1759-1763 (April 2024)Low-Cost and Highly Robust Quadruple Node Upset Tolerant Latch Design.L. Hao, Y. Wang, Y. Liu, S. Zhao, X. Zhang, Y. Li, W. Lu, C. Peng, Q. Zhao, Y. Zhou and 3 other author(s). IEEE Trans. Very Large Scale Integr. Syst., 32 (5): 883-896 (May 2024)A CFMB STT-MRAM-Based Computing-in-Memory Proposal With Cascade Computing Unit for Edge AI Devices.Y. Zhou, Z. Zhou, Y. Wei, Z. Yang, X. Lin, C. Dai, L. Hao, C. Peng, H. Cai, and X. Wu. IEEE Trans. Circuits Syst. I Regul. Pap., 71 (1): 187-200 (January 2024)Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.C. Dai, Y. Du, Q. Shi, R. Wang, H. Zheng, W. Lu, C. Peng, L. Hao, Z. Lin, and X. Wu. Microelectron. J., (February 2023)Design of radiation-hardened memory cell by polar design for space applications.L. Hao, L. Liu, Q. Shi, B. Qiang, Z. Li, N. Liu, C. Dai, Q. Zhao, C. Peng, W. Lu and 2 other author(s). Microelectron. J., (February 2023)Soft-Error-Immune Quadruple-Node-Upset Tolerant Latch Based on Polarity Design and Source-Isolation Technologies.L. Hao, X. Zhang, C. Dai, Q. Zhao, W. Lu, C. Peng, Y. Zhou, Z. Lin, and X. Wu. IEEE Trans. Very Large Scale Integr. Syst., 32 (4): 597-608 (April 2024)Radiation-hardened 14T SRAM cell by polar design for space applications.L. Hao, B. Qiang, C. Dai, C. Peng, W. Lu, Z. Lin, L. Liu, Q. Zhao, X. Wu, and F. Sun. IEICE Electron. Express, 20 (13): 20230083 (2023)

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Disambiguation of "Hao, Licai"

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Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.

Please choose a person to relate this publication to

Xiaofei Hao

Wenjin Hao

Jin Hao

Jun Hao

Yao Hao

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Hao, Licai"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.

Please choose a person to relate this publication to

Xiaofei Hao

Wenjin Hao

Jin Hao

Jun Hao

Yao Hao

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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Bit-line leakage current tracking and self-compensation circuit for SRAM reliability design.