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Experimental study and analysis of corner compensation structures for CMOS compatible bulk micromachining using 25 wt% TMAH.

, , , , and . Microelectron. J., 42 (1): 127-134 (2011)

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Modeling and simulation of temperature drift for ISFET-based pH sensor and its compensation through machine learning techniques., , , , , and . Int. J. Circuit Theory Appl., 47 (6): 954-970 (2019)Simulation and characterization of dual-gate SOI MOSFET, on-chip fabricated with ISFET., , , , , , and . VDAT, page 1-5. IEEE Computer Society, (2015)Experimental study and analysis of corner compensation structures for CMOS compatible bulk micromachining using 25 wt% TMAH., , , , and . Microelectron. J., 42 (1): 127-134 (2011)Fabrication and characterisation of Al gate n-metal-oxide-semiconductor field-effect transistor, on-chip fabricated with silicon nitride ion-sensitive field-effect transistor., , , , , , and . IET Comput. Digit. Tech., 10 (5): 268-272 (2016)Electrical equivalent modeling of MEMS differential capacitive accelerometer., , , , , and . Microelectron. J., (2020)Temperature and temporal drift compensation for Al2O3-gate ISFET-based pH sensor using machine learning techniques., , , , , and . Microelectron. J., (2020)Supplementary Files - Towards Development of an ISFET-based Smart pH Sensor: Enabling Machine Learning for Drift Compensation in IoT Applications., , , , , and . (May 2022)Design and Simulation of Bulk Micromachined Accelerometer for Avionics Application., , , and . VDAT, volume 382 of Communications in Computer and Information Science, page 94-99. Springer, (2013)Fabrication and characterization of Al gate n-MOSFET, on-chip fabricated with Si3N4 ISFET., , , , , , and . VDAT, page 1-4. IEEE Computer Society, (2015)