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Disambiguation of "Fleetwood, Daniel M."

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Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics.

, , , , and . Microelectron. Reliab., 44 (4): 563-575 (2004)

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Daniel M Böhi

Daniel M Blab

Daniel M Staub

Daniel M Frey

Daniel M Pircher

 

Other publications of authors with the same name

Effects of radiation and charge trapping on the reliability of high-kappa gate dielectrics., , , , and . Microelectron. Reliab., 44 (4): 563-575 (2004)Hydrogen in MOSFETs - A primary agent of reliability issues., , , , , and . Microelectron. Reliab., 47 (6): 903-911 (2007)High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors., , , , , , , , , and . Microelectron. Reliab., 51 (12): 2093-2096 (2011)Reliability Limiting Defects in MOS Gate Oxides: Mechanisms and Modeling Implications.. IRPS, page 1-10. IEEE, (2019)Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs., , , , , , , , , and . IRPS, page 2. IEEE, (2015)The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies., , , , , and . Microelectron. Reliab., 52 (11): 2521-2526 (2012)Total ionizing dose effects in shallow trench isolation oxides., , , , , , and . Microelectron. Reliab., 48 (7): 1000-1007 (2008)Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs., , , , , , , , , and . ASICON, page 1-4. IEEE, (2021)Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes.. DRC, page 1-2. IEEE, (2023)Charge Trapping in Irradiated 3D Devices and ICs (Invited)., , , , , and . IRPS, page 10. IEEE, (2024)