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CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments., , , , , , , , , and 32 other author(s). IWASI, page 49-54. IEEE, (2015)Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation., , , , , , and . Microelectron. Reliab., (2018)Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC., , , , , , , , and . ESSDERC, page 146-149. IEEE, (2016)Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT., , , , , , , and . Microelectron. Reliab., 55 (9-10): 1496-1500 (2015)A new test methodology for an exhaustive study of single-event-effects on power MOSFETs., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 51 (9-11): 1995-1998 (2011)Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs., , , , , , , and . ESSDERC, page 30-33. IEEE, (2017)1GigaRad TID impact on 28 nm HEP analog circuits., , , , , , and . Integr., (2018)