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Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)First Tests of a New Facility for Device-Level, Board-Level and System-Level Neutron Irradiation of Microelectronics., , , , and . IEEE Trans. Emerg. Top. Comput., 9 (1): 104-108 (2021)High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies., , , , , , , , , and 5 other author(s). DFT, page 121-125. IEEE Computer Society, (2012)Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions., , , , , , and . IOLTS, page 146-151. IEEE Computer Society, (2007)On the Evaluation of Radiation-Induced Transient Faults in Flash-Based FPGAs., , , , , , and . IOLTS, page 135-140. IEEE Computer Society, (2008)Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing., , , , , and . IEEE J. Solid State Circuits, 57 (9): 2878-2890 (2022)1GigaRad TID impact on 28 nm HEP analog circuits., , , , , , and . Integr., (2018)Impact of total dose on heavy-ion upsets in floating gate arrays., , , , , and . Microelectron. Reliab., 50 (9-11): 1837-1841 (2010)Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 46 (9-11): 1750-1753 (2006)Sensitivity Evaluation of TMR-Hardened Circuits to Multiple SEUs Induced by Alpha Particles in Commercial SRAM-Based FPGAs., , , , , and . DFT, page 79-86. IEEE Computer Society, (2007)