( en | de | ru )

 

Disambiguation of "Chen, Yin-Nien"

Author of the publication

copydeleteadd this publication to your clipboard
Exploration and evaluation of hybrid TFET-MOSFET monolithic 3D SRAMs considering interlayer coupling.

, , , and . ICICDT, page 1-4. IEEE, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Yin-Zu Chen

Jocelyn Ssu-Yin Chen

Lynn Tschun Nien

Wan-Nien Yao

Gia Nien Wu

 

Other publications of authors with the same name

Evaluation of TFET and FinFET devices and 32-Bit CLA circuits considering work function variation and line-edge roughness., , , , , and . ISCAS, page 2325-2328. IEEE, (2015)Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell., , , , and . ISLPED, page 255-258. ACM, (2014)A comparative analysis of tunneling FET circuit switching characteristics and SRAM stability and performance., , , , , , and . ESSDERC, page 157-160. IEEE, (2012)A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control., , , , , , , , , and 9 other author(s). SoCC, page 197-200. IEEE, (2011)Impacts of single trap induced random telegraph noise on Si and Ge nanowire FETs, 6T SRAM cells and logic circuits., , , , , and . ICICDT, page 61-64. IEEE, (2013)Impacts of random telegraph noise on the analog properties of FinFET and trigate devices and Widlar current source., , , , , , and . ICICDT, page 1-4. IEEE, (2012)Evaluation of 32-Bit carry-look-ahead adder circuit with hybrid tunneling FET and FinFET devices., , , , , and . ICICDT, page 1-4. IEEE, (2015)A comprehensive comparative analysis of FinFET and Trigate device, SRAM and logic circuits., , , , , , and . APCCAS, page 463-466. IEEE, (2012)Exploration and evaluation of low-dropout linear voltage regulator with FinFET, TFET and hybrid TFET-FinFET implementations., , , , and . ISCAS, page 1-4. IEEE, (2017)Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits., , , , , and . Microelectron. Reliab., 54 (4): 698-711 (2014)