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Bipolar Transistors' Holding Phenomena., , , , , , , , , and 3 other author(s). ICCE-Taiwan, page 221-222. IEEE, (2023)Tunable Holding-Voltage High Voltage ESD Devices., and . IRPS, page 1-8. IEEE, (2019)The Correlations between ESD and TLP in Large Array Devices., , , , , , , , , and . ICCE-TW, page 1-2. IEEE, (2020)Optimizing Power IC Layouts by Simulation Tools., , , , , , and . ICCE-TW, page 1-2. IEEE, (2021)Methodology to achieve planar technology-like ESD performance in FINFET process., , , , , and . IRPS, page 3. IEEE, (2015)A new pre-driver design for improving the ESD performance of the high voltage tolerant I/O., , , , and . ISCAS (2), page 1198-1201. IEEE, (2005)Analyzing Gate-Driven Circuit Parameters for Adding ESD Performances., , , , , , , , , and . ICCE-TW, page 1-2. IEEE, (2019)EOS Endurance Power Circuits without Depletion Mode Devices., , , , , , , , , and 6 other author(s). ICCE-TW, page 79-80. IEEE, (2022)Physical Model for ESD Human Body Model to Transmission Line Pulse., , and . IRPS, page 1-7. IEEE, (2019)Robust ESD self-protected LDNMOSFET by an enhanced displacement-current triggering., , , , , , , and . IRPS, page 5. IEEE, (2015)