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Tunable Holding-Voltage High Voltage ESD Devices., и . IRPS, стр. 1-8. IEEE, (2019)Bipolar Transistors' Holding Phenomena., , , , , , , , , и 3 other автор(ы). ICCE-Taiwan, стр. 221-222. IEEE, (2023)The Correlations between ESD and TLP in Large Array Devices., , , , , , , , , и . ICCE-TW, стр. 1-2. IEEE, (2020)Optimizing Power IC Layouts by Simulation Tools., , , , , , и . ICCE-TW, стр. 1-2. IEEE, (2021)A new pre-driver design for improving the ESD performance of the high voltage tolerant I/O., , , , и . ISCAS (2), стр. 1198-1201. IEEE, (2005)Methodology to achieve planar technology-like ESD performance in FINFET process., , , , , и . IRPS, стр. 3. IEEE, (2015)EOS Endurance Power Circuits without Depletion Mode Devices., , , , , , , , , и 6 other автор(ы). ICCE-TW, стр. 79-80. IEEE, (2022)Analyzing Gate-Driven Circuit Parameters for Adding ESD Performances., , , , , , , , , и . ICCE-TW, стр. 1-2. IEEE, (2019)Enhanced CDM-robustness for the packaged IC with the extra bonding wire to the die-attach plate., , , , , и . IRPS, стр. 6. IEEE, (2015)Transmission Line Pulse Width Impacting on Device Performances., , , , , , , , , и 3 other автор(ы). ICCE-Taiwan, стр. 227-228. IEEE, (2023)