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Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors.

, , , , , , , , , , , , , , , , , , , and . IEEE J. Solid State Circuits, 55 (1): 203-215 (2020)

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Challenges and Circuit Techniques for Energy-Efficient On-Chip Nonvolatile Memory Using Memristive Devices., , , , , , and . IEEE J. Emerg. Sel. Topics Circuits Syst., 5 (2): 183-193 (2015)A ReRAM Macro Using Dynamic Trip-Point-Mismatch Sampling Current-Mode Sense Amplifier and Low-DC Voltage-Mode Write-Termination Scheme Against Resistance and Write-Delay Variation., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 54 (2): 584-595 (2019)Self-Convergent Trimming SRAM True Random Number Generation With In-Cell Storage., , , , , and . IEEE J. Solid State Circuits, 54 (9): 2614-2621 (2019)High Density Embedded 3D Stackable Via RRAM in Advanced MCU Applications., , , , , , , and . VLSI Technology and Circuits, page 1-2. IEEE, (2023)FinFET CMOS logic gates with non-volatile states for reconfigurable computing systems., , , , , and . Integr., (2019)A 65-nm ReRAM-Enabled Nonvolatile Processor With Time-Space Domain Adaption and Self-Write-Termination Achieving > 4× Faster Clock Frequency and > 6× Higher Restore Speed., , , , , , , , , and 7 other author(s). IEEE J. Solid State Circuits, 52 (10): 2769-2785 (2017)A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 52 (8): 2194-2207 (2017)Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 55 (1): 203-215 (2020)Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 50 (11): 2786-2795 (2015)7.4 A 256b-wordlength ReRAM-based TCAM with 1ns search-time and 14× improvement in wordlength-energyefficiency-density product using 2.5T1R cell., , , , , , , , , and 1 other author(s). ISSCC, page 136-137. IEEE, (2016)