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Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs., , , , , and . IRPS, page 1-6. IEEE, (2020)TDDB Reliability in Gate-All-Around Nanosheet., , , , , , , , and . IRPS, page 1-6. IEEE, (2021)NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation., , , , , , and . IRPS, page 2. IEEE, (2015)Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS., , , , , , , , , and 1 other author(s). ASICON, page 573-576. IEEE, (2017)Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2019)Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs., , , , , , and . IRPS, page 1-8. IEEE, (2021)Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch., , , , , , , and . IRPS, page 1-5. IEEE, (2019)NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor., , , , , , , , , and . IRPS, page 1-6. IEEE, (2020)Hot carrier reliability in ultra-scaled sige channel p-FinFETs., , , and . ASICON, page 666-669. IEEE, (2017)Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics., , , and . IRPS, page 6. IEEE, (2018)