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Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs., , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer., , , , , , , , , and 10 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey., , , , , , , , , and . Microelectron. Reliab., 45 (5-6): 786-789 (2005)Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks., , , , , , , , , and 5 other author(s). Microelectron. Reliab., 47 (4-5): 518-520 (2007)Towards high performance sub-10nm finW bulk FinFET technology., , , , , , , , , and 10 other author(s). ESSDERC, page 131-134. IEEE, (2016)Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach., , , , , , , , , and 7 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Assessment of SiGe quantum well transistors for DRAM peripheral applications., , , , , , , , , and 1 other author(s). ICICDT, page 1-4. IEEE, (2015)Analysis of BTI in 300 mm integrated dual-gate WS2 FETs., , , , , , and . DRC, page 1-2. IEEE, (2022)Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , and 8 other author(s). ESSDERC, page 190-193. IEEE, (2013)