( en | de | ru )

 

Disambiguation of "Niquet, Yann-Michel"

Author of the publication

copydeleteadd this publication to your clipboard
The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire.

, , , , , , , , , , , and . ESSDERC, page 147-150. IEEE, (2013)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Bernd Niquet

Marcel Niquet

Georgios Yannis

Christos Yannissis

Franz Niquet

 

Other publications of authors with the same name

Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , and . ESSDERC, page 210-213. IEEE, (2015)MOS technology for quantum computing: recent progress and perspectives for scaling up., , , , , , , , , and 3 other author(s). DRC, page 1-2. IEEE, (2021)SOI CMOS technology for quantum information processing., , , , , , , , , and 5 other author(s). ICICDT, page 1-4. IEEE, (2017)Si MOS technology for spin-based quantum computing., , , , , , , , , and 7 other author(s). ESSDERC, page 12-17. IEEE, (2018)The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire., , , , , , , , , and 2 other author(s). ESSDERC, page 147-150. IEEE, (2013)Towards scalable silicon quantum computing., , , , , , , , , and 7 other author(s). DRC, page 1-2. IEEE, (2018)Specificities of linear Si QD arrays integration and characterization., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 415-416. IEEE, (2022)Transport properties of strained silicon nanowires., , , , and . ESSDERC, page 290-293. IEEE, (2012)A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD., , , , , , , and . ESSDERC, page 424-427. IEEE, (2016)