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A transformer-based broadband I/O matching-balun-T/R switch front-end combo scheme in standard CMOS., , , and . CICC, page 1-4. IEEE, (2011)A 2.7-V 900-MHz/1.9-GHz dual-band transceiver IC for digital wireless communication., , , , , and . IEEE J. Solid State Circuits, 34 (3): 286-291 (1999)A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 57 (12): 3582-3598 (2022)A 1.1V 5-to-6GHz reduced-component direct-conversion transmit signal path in 45nm CMOS., , , , and . ISSCC, page 418-419. IEEE, (2009)A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax Applications., , , , and . IEEE J. Solid State Circuits, 44 (12): 3393-3402 (2009)A single-chip highly linear 2.4GHz 30dBm power amplifier in 90nm CMOS., , , , , and . ISSCC, page 378-379. IEEE, (2009)A 6.0mW 3.8GS/s 7b VTC/TDC-Assisted Interleaved SAR ADC with 13GHz ERBW., , , , , , , , , and . VLSI Technology and Circuits, page 170-171. IEEE, (2022)FinFET for mm Wave - Technology and Circuit Design Challenges., , , , and . BCICTS, page 168-173. IEEE, (2018)A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology., , , , , , , , , and 2 other author(s). ISSCC, page 78-80. IEEE, (2022)An $E$ -Band Power Amplifier With 26.3% PAE and 24-GHz Bandwidth in 22-nm FinFET CMOS., , and . IEEE J. Solid State Circuits, 54 (5): 1266-1273 (2019)