( en | de | ru )

 

Disambiguation of "Raskin, Jean-Pierre"

Author of the publication

copydeleteadd this publication to your clipboard
RF performance of Standard, High-Resistivity and Trap-Rich Silicon substrates down to cryogenic temperature.

, , , , , , , , , , and . ESSDERC, page 148-151. IEEE, (2023)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Pierre Jean Regenet

Jean Pierre Calteux

Jean-Pierre Mazat

Jean-Pierre Dubost

Jean-Pierre Détry

 

Other publications of authors with the same name

FinFET versus UTBB SOI - A RF perspective.. ESSDERC, page 84-88. IEEE, (2015)Efficient passive energy harvesters at 950 MHz and 2.45 GHz for 100 μW applications in 65 nm CMOS., , and . ICECS, page 508-511. IEEE, (2016)New Internal Stress Driven on-Chip Micromachines for Extracting Mechanical Properties of Thin Films, , , and . CoRR, (2007)Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI., , , , and . ESSDERC, page 195-198. IEEE, (2021)Variation Range of Different Inductor Topologies with Shields for RF and Inductive Sensing Applications., , , , , , and . Sensors, 22 (9): 3514 (2022)Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer., , , , , , and . Microelectron. Reliab., 51 (2): 326-331 (2011)Variability of UTBB MOSFET analog figures of merit in wide frequency range., , , , , , , and . ESSDERC, page 222-225. IEEE, (2014)Through silicon via to FinFET noise coupling in 3-D integrated circuits., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2015)Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation., , , , and . Microelectron. J., 39 (12): 1663-1670 (2008)Substrate noise mitigation using high resistivity base silicon wafer for a 14 GHz VCO on 28 nm FD-SOI., , , , and . NEWCAS, page 1-5. IEEE, (2023)