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Destructive events in NAND Flash memories irradiated with heavy ions.

, , , , , and . Microelectron. Reliab., 50 (9-11): 1832-1836 (2010)

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Destructive events in NAND Flash memories irradiated with heavy ions., , , , , and . Microelectron. Reliab., 50 (9-11): 1832-1836 (2010)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)First Tests of a New Facility for Device-Level, Board-Level and System-Level Neutron Irradiation of Microelectronics., , , , and . IEEE Trans. Emerg. Top. Comput., 9 (1): 104-108 (2021)Single Event Effects in 1Gbit 90nm NAND Flash Memories under Operating Conditions., , , , , , and . IOLTS, page 146-151. IEEE Computer Society, (2007)High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies., , , , , , , , , and 5 other author(s). DFT, page 121-125. IEEE Computer Society, (2012)Radiation Tolerant Multi-Bit Flip-Flop System With Embedded Timing Pre-Error Sensing., , , , , and . IEEE J. Solid State Circuits, 57 (9): 2878-2890 (2022)Impact of total dose on heavy-ion upsets in floating gate arrays., , , , , and . Microelectron. Reliab., 50 (9-11): 1837-1841 (2010)Temperature dependence of neutron-induced soft errors in SRAMs., , , , , and . Microelectron. Reliab., 52 (1): 289-293 (2012)Soft errors in floating gate memory cells: A review., and . Microelectron. Reliab., 55 (1): 24-30 (2015)Single Phase Clock Based Radiation Tolerant D Flip-flop Circuit., , , , , and . IOLTS, page 1-6. IEEE, (2020)