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Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs.

, , , , , , , , and . J. Circuits Syst. Comput., 28 (Supplement-1): 1940009:1-1940009:14 (2019)

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Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs., , , , , , , , and . J. Circuits Syst. Comput., 28 (Supplement-1): 1940009:1-1940009:14 (2019)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectron. Reliab., (2017)Electrical field mapping in InGaP HEMTs and GaAs terahertz emitters using backside infrared OBIC technique., , , , , , , , , and . Microelectron. Reliab., 42 (9-11): 1673-1677 (2002)Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structures., , , , , , , and . Microelectron. Reliab., 47 (4-5): 790-793 (2007)Material and device issues of AlGaN/GaN HEMTs on silicon substrates., , , , , , , and . Microelectron. J., 34 (5-8): 435-437 (2003)Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell., , , , , , , , and . DTIS, page 1-6. IEEE, (2018)