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Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs.

A. Chvála, L. Nagy, J. Marek, J. Priesol, D. Donoval, A. Satka, M. Blaho, D. Gregusová, and J. Kuzmík. J. Circuits Syst. Comput., 28 (Supplement-1): 1940009:1-1940009:14 (2019)

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Ales Stanek

Beat Alessandri

Davide Alessio

Ales Sobota

Ales Rekar

Other publications of authors with the same name

Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation.A. Chvála, D. Donoval, P. Beno, J. Marek, P. Pribytny, and M. Molnar. Microelectron. Reliab., 52 (6): 1031-1038 (2012)Power MOSFET interactive e-learning course.J. Marek, L. Stuchlikova, D. Donoval, P. Benko, A. Chvála, and M. Molnar. EWME, page 120-123. IEEE, (2014)Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation.P. Pribytny, D. Donoval, A. Chvála, J. Marek, and M. Molnar. Microelectron. Reliab., 52 (3): 463-468 (2012)The secret of successful student team project.J. Marek, P. Benko, A. Chvála, A. Kosa, P. Pribytny, L. Stuchlikova, and D. Donoval. EWME, page 1-6. IEEE, (2016)Low-Leakage ESD Structures in 130nm CMOS Technology.L. Nagy, A. Chvála, and V. Stopjaková. RADIOELEKTRONIKA, page 1-4. IEEE, (2020)How to prepare university graduates as highly skilled key enabling technologies professionals?L. Stuchlikova, A. Kosa, P. Benko, J. Marek, A. Chvála, and D. Donoval. EWME, page 1-6. IEEE, (2016)2/3-D device simulations as an effective tool in microelectronics education.A. Chvála, J. Marek, A. Kosa, P. Pribytny, L. Stuchlikova, and D. Donoval. EWME, page 1-5. IEEE, (2016)Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.J. Kovác, A. Satka, A. Chvála, D. Donoval, P. Kordos, and S. Delage. Microelectron. Reliab., 52 (7): 1323-1327 (2012)Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.A. Chvála, J. Marek, P. Pribytny, A. Satka, S. Stoffels, N. Posthuma, S. Decoutere, and D. Donoval. Microelectron. Reliab., (2017)Device and circuit models of InAlN/GaN D- and dual-gate E-mode HEMTs for design and characterisation of monolithic NAND logic cell.A. Chvála, L. Nagy, J. Marek, J. Priesol, D. Donoval, A. Satka, M. Blaho, D. Gregusová, and J. Kuzmík. DTIS, page 1-6. IEEE, (2018)

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Disambiguation of "Chvála, Ales"

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URL
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Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs.

Please choose a person to relate this publication to

Ales Stanek

Beat Alessandri

Davide Alessio

Ales Sobota

Ales Rekar

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Chvála, Ales"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs.

Please choose a person to relate this publication to

Ales Stanek

Beat Alessandri

Davide Alessio

Ales Sobota

Ales Rekar

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Device and Circuit Models of Monolithic InAlN/GaN NAND and NOR Logic Cells Comprising D- and E-Mode HEMTs.