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Design Optimization for Process-Variation-Tolerant 22-nm FinFET-Based 6-T SRAM Cell with Worst-Case Sampling Method., and . IEICE Trans. Electron., 99-C (5): 541-543 (2016)Quantitative Evaluation of Line-Edge Roughness in Various FinFET Structures: Bayesian Neural Network With Automatic Model Selection., , , , and . IEEE Access, (2022)Probabilistic Artificial Neural Network for Line-Edge-Roughness-Induced Random Variation in FinFET., , and . IEEE Access, (2021)Amorphous Indium Zinc Oxide Thin-Film Transistor with Steep Subthreshold Slope by Negative Capacitance., , and . IEICE Trans. Electron., 99-C (5): 544-546 (2016)Impact of Chamber/Annealing Temperature on the Endurance Characteristic of Zr: HfO2 Ferroelectric Capacitor., , , , , , , , and . Sensors, 22 (11): 4087 (2022)State-of-the-art silicon device miniaturization technology and its challenges.. IEICE Electron. Express, 11 (10): 20142005 (2014)Comparative study in work-function variation: Gaussian vs. Rayleigh distribution for grain size., and . IEICE Electron. Express, 10 (9): 20130109 (2013)Column Row Convolutional Neural Network: Reducing Parameters for Efficient Image Processing., , , , , and . Neural Comput., 36 (4): 744-758 (April 2024)GAN-Based Framework for Unified Estimation of Process-Induced Random Variation in FinFET., , , , , , , and . IEEE Access, (2022)Comparative Study of Novel u-Shaped SOI FinFET Against Multiple-Fin Bulk/SOI FinFET., , , and . IEEE Access, (2023)