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25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS.

, , и . ISSCC, стр. 424-425. IEEE, (2016)

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Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

Bernd Heinemann

 

Другие публикации лиц с тем же именем

Subclasses of Self-Modifying Nets.. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets, том 52 из Informatik-Fachberichte, стр. 187-192. Springer, (1981)Recombination current measurements in the space charge region of MOS field-induced pn junctions., и . Microelectron. Reliab., 41 (6): 789-795 (2001)A Terahertz Detector Array in a SiGe HBT Technology., , , и . IEEE J. Solid State Circuits, 48 (9): 2002-2010 (2013)A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications., , , , , и . IEEE J. Solid State Circuits, 57 (7): 2024-2034 (2022)Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology., , , , , , , , , и 15 other автор(ы). OFC, стр. 1-3. IEEE, (2014)Comments on I. Futo, T. Gergely.. International Working Conference on Model Realism, стр. 47-48. Springer, (1982)SiGe BiCMOS technology for mm-wave systems., и . ISOCC, стр. 266-268. IEEE, (2012)A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS., , , , , , , , и . ISSCC, стр. 418-420. IEEE, (2018)A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging., , , , , , , , и . IEEE J. Solid State Circuits, 53 (12): 3599-3612 (2018)A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology., , , , , , , , и . ESSCIRC, стр. 263-266. IEEE, (2005)