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Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.

, , , , and . ESSDERC, page 218-221. IEEE, (2018)

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Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI., , , , and . ESSDERC, page 218-221. IEEE, (2018)Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits., , , , , and . Microelectron. Reliab., 45 (1): 39-46 (2005)NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification., , , , and . Microelectron. Reliab., (2018)New insights on the PBTI phenomena in SiON pMOSFETs., , , , , , and . Microelectron. Reliab., 52 (9-10): 1891-1894 (2012)Practical aspects of reliability analysis for IC designs., , , , and . DAC, page 193-198. ACM, (2006)Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability., , , , and . IRPS, page 1-7. IEEE, (2023)Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays., , , , and . IRPS, page 1-8. IEEE, (2022)Degradation and recovery of variability due to BTI., , , , , and . Microelectron. Reliab., (2016)From Device Aging Physics to Automated Circuit Reliability Sign Off., , , , , , and . IRPS, page 1-12. IEEE, (2019)