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A nonvolatile look-up table using ReRAM for reconfigurable logic., , , , , , , , , and 7 other author(s). A-SSCC, page 133-136. IEEE, (2014)Metal-Oxide RRAM., , , , , , , , and . Proc. IEEE, 100 (6): 1951-1970 (2012)Data retention statistics and modelling in HfO2 resistive switching memories., , , , , , and . IRPS, page 7. IEEE, (2015)Circuit Design Challenges in Computing-in-Memory for AI Edge Devices., , , , , , , , , and 1 other author(s). ASICON, page 1-4. IEEE, (2019)15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips., , , , , , , , , and 13 other author(s). ISSCC, page 240-242. IEEE, (2020)A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability., , , , , , , , , and 12 other author(s). ISSCC, page 200-202. IEEE, (2011)A High-Speed 7.2-ns Read-Write Random Access 4-Mb Embedded Resistive RAM (ReRAM) Macro Using Process-Variation-Tolerant Current-Mode Read Schemes., , , , , , , , , and 5 other author(s). IEEE J. Solid State Circuits, 48 (3): 878-891 (2013)17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time., , , , , , , , , and 1 other author(s). ISSCC, page 1-3. IEEE, (2015)NV-BNN: An Accurate Deep Convolutional Neural Network Based on Binary STT-MRAM for Adaptive AI Edge., , , , , , , , , and 1 other author(s). DAC, page 30. ACM, (2019)Analyzing inference robustness of RRAM synaptic array in low-precision neural network., , and . ESSDERC, page 18-21. IEEE, (2017)