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Beyond-Si materials and devices for more Moore and more than Moore applications.

N. Collaert, A. Alian, H. Arimura, G. Boccardi, G. Eneman, J. Franco, T. Ivanov, D. Lin, J. Mitard, S. Ramesh, R. Rooyackers, M. Schaekers, A. Sibaya-Hernandez, S. Sioncke, Q. Smets, A. Vais, A. Vandooren, A. Veloso, A. Verhulst, D. Verreck, N. Waldron, A. Walke, L. Witters, H. Yu, X. Zhou, and A. Thean. ICICDT, page 1-5. IEEE, (2016)

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Franz Smets

Anne Smets

Florian Smets

Heiner Smets

Helga Smets

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Analysis of BTI in 300 mm integrated dual-gate WS2 FETs.L. Panarella, Q. Smets, D. Verreck, T. Schram, D. Cott, I. Asselberghs, and B. Kaczer. DRC, page 1-2. IEEE, (2022)Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures.Y. Balaji, Q. Smets, C. de la Rosa, A. Lu, D. Chiappe, T. Agarwal, D. Lin, C. Huyghebaert, I. Radu, D. Mocuta and 1 other author(s). ESSDERC, page 106-109. IEEE, (2017)Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.L. Panarella, B. Kaczer, Q. Smets, D. Verreck, T. Schram, D. Cott, D. Lin, S. Tyaginov, I. Asselberghs, C. de la Rosa and 2 other author(s). IRPS, page 1-6. IEEE, (2023)Beyond-Si materials and devices for more Moore and more than Moore applications.N. Collaert, A. Alian, H. Arimura, G. Boccardi, G. Eneman, J. Franco, T. Ivanov, D. Lin, J. Mitard, S. Ramesh and 16 other author(s). ICICDT, page 1-5. IEEE, (2016)Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach.S. Kundu, D. van Doip, T. Schram, Q. Smets, S. Banerjee, B. Groven, D. Cott, S. Decoster, P. Bezard, F. Lazzarino and 7 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)The Promise of 2-D Materials for Scaled Digital and Analog Applications.D. Verreck, P. Wambacq, M. Put, Z. Ahmed, Q. Smets, A. Afzalian, R. Duflou, X. Wu, G. Mirabelli, R. Chen and 2 other author(s). ISSCC, page 394-395. IEEE, (2023)WS2 transistors on 300 mm wafers with BEOL compatibility.T. Schram, Q. Smets, B. Groven, M. Heyne, E. Kunnen, A. Thiam, K. Devriendt, A. Delabie, D. Lin, M. Lux and 8 other author(s). ESSDERC, page 212-215. IEEE, (2017)Tunnel FETs using Phosphorene/ReS2 heterostructures.Y. Balaji, Q. Smets, D. Lin, I. Asselberghs, I. Radu, and G. Groeseneken. DRC, page 113-114. IEEE, (2019)Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices.J. Bizindavyi, A. Verhulst, Q. Smets, B. Sorée, and G. Groeseneken. DRC, page 253-254. IEEE, (2019)Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer.S. Ghosh, Q. Smets, S. Banerjee, T. Schram, K. Kennes, R. Verheyen, P. Kumar, M. Boulon, B. Groven, H. Silva and 10 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)

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Disambiguation of "Smets, Quentin"

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Beyond-Si materials and devices for more Moore and more than Moore applications.

Please choose a person to relate this publication to

Franz Smets

Anne Smets

Florian Smets

Heiner Smets

Helga Smets

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Smets, Quentin"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Beyond-Si materials and devices for more Moore and more than Moore applications.

Please choose a person to relate this publication to

Franz Smets

Anne Smets

Florian Smets

Heiner Smets

Helga Smets

Other publications of authors with the same name

Disambiguation

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URL
DOI
BibTeX
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Chicago
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Beyond-Si materials and devices for more Moore and more than Moore applications.