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Coupling control in the few-electron regime of quantum dot arrays using 2-metal gate levels in CMOS technology., , , , , , , , , и 6 other автор(ы). ESSCIRC, стр. 45-48. IEEE, (2022)Si MOS technology for spin-based quantum computing., , , , , , , , , и 7 other автор(ы). ESSDERC, стр. 12-17. IEEE, (2018)Transport characterization of CMOS-based devices fabricated with isotopically-enriched 28Si for spin qubit applications., , , , , , , , , и 1 other автор(ы). ESSDERC, стр. 5-8. IEEE, (2023)Specificities of linear Si QD arrays integration and characterization., , , , , , , , , и 11 other автор(ы). VLSI Technology and Circuits, стр. 415-416. IEEE, (2022)Towards scalable silicon quantum computing., , , , , , , , , и 7 other автор(ы). DRC, стр. 1-2. IEEE, (2018)MOS technology for quantum computing: recent progress and perspectives for scaling up., , , , , , , , , и 3 other автор(ы). DRC, стр. 1-2. IEEE, (2021)SOI CMOS technology for quantum information processing., , , , , , , , , и 5 other автор(ы). ICICDT, стр. 1-4. IEEE, (2017)