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Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications.

, , , , , , and . BCICTS, page 1-4. IEEE, (2021)

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Analysis of the Factors Limiting the RF Breakdown Voltage in SiGe HBTs for Wi-Fi PA Applications., , , , , , and . BCICTS, page 1-4. IEEE, (2021)Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOS., , , , , and . BCICTS, page 18-21. IEEE, (2018)Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA Applications., , , , , , and . BCICTS, page 182-185. IEEE, (2018)Integrated silicon RF front-end solutions for mobile communications., and . ASICON, page 1-4. IEEE, (2013)Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS., , , , , , , , , and 1 other author(s). Proc. IEEE, 93 (9): 1539-1558 (2005)Silicon-germanium BiCMOS HBT technology for wireless power amplifier applications., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 39 (10): 1605-1614 (2004)40-Gb/s circuits built from a 120-GHz fT SiGe technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 37 (9): 1106-1114 (2002)Product applications and technology directions with SiGe BiCMOS., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 38 (9): 1471-1478 (2003)Foundation of rf CMOS and SiGe BiCMOS technologies., , , , , , , , , and 12 other author(s). IBM J. Res. Dev., 47 (2-3): 101-138 (2003)Concurrent Design Analysis of High-Linearity SP10T Switch With 8.5 kV ESD Protection., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 49 (9): 1927-1941 (2014)