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Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures.

, , , , , , , , and . Microelectron. Reliab., 49 (9-11): 1211-1215 (2009)

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Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures., , , , , , , , and . Microelectron. Reliab., 49 (9-11): 1211-1215 (2009)Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements., , , , , , and . Microelectron. Reliab., 51 (2): 217-223 (2011)E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulator., , , , , , , , , and 1 other author(s). ESSDERC, page 60-63. IEEE, (2015)Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , and . Microelectron. Reliab., 52 (9-10): 2426-2430 (2012)GaN-channel HEMTs with AlN buffer for high-voltage switching., , , , and . DRC, page 1-2. IEEE, (2021)Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure., , , , , , , , , and 5 other author(s). Microelectron. Reliab., (2016)Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs., , , and . Microelectron. Reliab., (2016)The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications., , , , , , and . DRC, page 1-2. IEEE, (2020)Trapping in $Al_2O_3/GaN$ MOScaps investigated by fast capacitive techniques., , , , , , and . IRPS, page 1-5. IEEE, (2023)