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The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications.

, , , , , , and . DRC, page 1-2. IEEE, (2020)

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Temperature dependent dynamic on-state resistance in GaN-on-Si based normally-off HFETs., , , and . Microelectron. Reliab., (2016)The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications., , , , , , and . DRC, page 1-2. IEEE, (2020)Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures., , , , , , , , and . Microelectron. Reliab., 49 (9-11): 1211-1215 (2009)Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements., , , , , , and . Microelectron. Reliab., 51 (2): 217-223 (2011)New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 54 (6-7): 1288-1292 (2014)Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing., , , , , and . Microelectron. Reliab., 41 (8): 1103-1108 (2001)Determination of GaN HEMT reliability by monitoring IDSS., , and . Microelectron. Reliab., 50 (6): 763-766 (2010)Reliability Investigation of Gallium Nitride HEMT., , , , , , , , and . Microelectron. Reliab., 44 (9-11): 1369-1373 (2004)Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applications., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 53 (9-11): 1444-1449 (2013)Reliability studies on GaN HEMTs with sputtered Iridium gate module., , and . Microelectron. Reliab., 52 (9-10): 2144-2148 (2012)