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IGBT module failure analysis in railway applications.

X. Perpiñà, J. Serviere, X. Jordà, A. Fauquet, S. Hidalgo, J. Urresti-Ibañez, J. Rebollo, and M. Mermet-Guyennet. Microelectron. Reliab., 48 (8-9): 1427-1431 (2008)

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Humberto Jorge José

Nadine José Gonzalez

José Baena

José Teixeira

José Izquierdo

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Lateral punch-through TVS devices for on-chip protection in low-voltage applications.J. Urresti, S. Hidalgo, D. Flores, J. Roig, I. Cortés, and J. Rebollo. Microelectron. Reliab., 45 (7-8): 1181-1186 (2005)Robustness test and failure analysis of IGBT modules during turn-off.J. Urresti-Ibañez, A. Castellazzi, M. Piton, J. Rebollo, M. Mermet-Guyennet, and M. Ciappa. Microelectron. Reliab., 47 (9-11): 1725-1729 (2007)Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.V. Soler, M. Berthou, A. Mihaila, J. Montserrat, P. Godignon, J. Rebollo, and J. Millán. ESSDERC, page 68-71. IEEE, (2015)Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.X. Perpiñà, J. Serviere, J. Urresti-Ibañez, I. Cortés, X. Jordà, S. Hidalgo, J. Rebollo, and M. Mermet-Guyennet. IEEE Trans. Ind. Electron., 58 (7): 2706-2714 (2011)Long-Term Reliability of Railway Power Inverters Cooled by Heat-Pipe-Based Systems.X. Perpiñà, X. Jordà, M. Vellvehí, J. Rebollo, and M. Mermet-Guyennet. IEEE Trans. Ind. Electron., 58 (7): 2662-2672 (2011)High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.V. Soler, M. Cabello, M. Berthou, J. Montserrat, J. Rebollo, P. Godignon, A. Mihaila, M. Rogina, A. Rodriguez, and J. Sebastián. IEEE Trans. Ind. Electron., 64 (11): 8962-8970 (2017)IGBT module failure analysis in railway applications.X. Perpiñà, J. Serviere, X. Jordà, A. Fauquet, S. Hidalgo, J. Urresti-Ibañez, J. Rebollo, and M. Mermet-Guyennet. Microelectron. Reliab., 48 (8-9): 1427-1431 (2008)Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.I. Cortés, P. Fernández-Martínez, D. Flores, S. Hidalgo, and J. Rebollo. Microelectron. Reliab., 48 (2): 173-180 (2008)Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.I. Cortés, J. Roig, D. Flores, J. Urresti, S. Hidalgo, and J. Rebollo. Microelectron. Reliab., 45 (3-4): 493-498 (2005)Reduction of self-heating effect on SOIM devices.J. Roig, D. Flores, M. Vellvehí, J. Rebollo, and J. Millán. Microelectron. Reliab., 42 (1): 61-66 (2002)

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Disambiguation of "Rebollo, José"

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IGBT module failure analysis in railway applications.

Please choose a person to relate this publication to

Humberto Jorge José

Nadine José Gonzalez

José Baena

José Teixeira

José Izquierdo

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Rebollo, José"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML IGBT module failure analysis in railway applications.

Please choose a person to relate this publication to

Humberto Jorge José

Nadine José Gonzalez

José Baena

José Teixeira

José Izquierdo

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
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IGBT module failure analysis in railway applications.