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Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , and . IRPS, page 3. IEEE, (2015)A Pragmatic Model to Predict Future Device Aging., , , , , , , , , and 1 other author(s). IEEE Access, (2023)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , and 2 other author(s). IRPS, page 10. IEEE, (2022)Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress., , , , , , , , , and 1 other author(s). IRPS, page 10. IEEE, (2022)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation., , , , , and . IRPS, page 1-9. IEEE, (2023)Reliability and Variability-Aware DTCO Flow: Demonstration of Projections to N3 FinFET and Nanosheet Technologies., , , , , , , , , and 10 other author(s). IRPS, page 1-6. IEEE, (2021)Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics., , , , , , , , and . IRPS, page 4. IEEE, (2022)FinFET and MOSFET preliminary comparison of gate oxide reliability., , , , , and . Microelectron. Reliab., 46 (9-11): 1608-1611 (2006)