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The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)Time dependent variability in RMG-HKMG FinFETs: Impact of extraction scheme on stochastic NBTI., , , , , and . IRPS, page 3. IEEE, (2015)Understanding the Potential and the Limits of Germanium pMOSFETs for VLSI Circuits From Experimental Measurements., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 19 (9): 1569-1582 (2011)Buried Silicon-Germanium pMOSFETs: Experimental Analysis in VLSI Logic Circuits Under Aggressive Voltage Scaling., , , , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 20 (8): 1487-1495 (2012)A Pragmatic Model to Predict Future Device Aging., , , , , , , , , and 1 other author(s). IEEE Access, (2023)FinFET and MOSFET preliminary comparison of gate oxide reliability., , , , , and . Microelectron. Reliab., 46 (9-11): 1608-1611 (2006)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectron. Reliab., (2018)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , and 2 other author(s). IRPS, page 10. IEEE, (2022)Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress., , , , , , , , , and 1 other author(s). IRPS, page 10. IEEE, (2022)