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Disambiguation of "Wakabayashi, Hitoshi"

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3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

, , , , , , , , , , , , , , , , , , , , , and . ASICON, page 1137-1140. IEEE, (2017)

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Hidehiko Wakabayashi

Hitoshi Tamura

Yoshiko Wakabayashi

Hitoshi Endo

Hitoshi Abe

 

Other publications of authors with the same name

A 0.25-μm CMOS 0.9-V 100-MHz DSP core., , , , , , and . IEEE J. Solid State Circuits, 32 (1): 52-61 (1997)Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 55 (2): 402-406 (2015)Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 54 (4): 725-729 (2014)3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)., , , , , , , , , and 12 other author(s). ASICON, page 1137-1140. IEEE, (2017)Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current., , , , and . Microelectron. Reliab., (2016)New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment., , , , , , , , , and 10 other author(s). VLSI Circuits, page 105-106. IEEE, (2018)Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing., , , , , , , and . Microelectron. Reliab., (2018)A Novel Method for Lightning Prediction by Direct Electric Field Measurements at the Ground Using Recurrent Neural Network., , , , , , , , , and 4 other author(s). IEICE Trans. Inf. Syst., 105-D (9): 1624-1628 (September 2022)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)