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Disambiguation of "Tsutsui, Kazuo"

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3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).

, , , , , , , , , , , , , , , , , , , , , and . ASICON, page 1137-1140. IEEE, (2017)

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Kenji Tsutsui

Kazuo Inoue

Kazuo Okohira

Kazuo Yajima

Kazuo Araki

 

Other publications of authors with the same name

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 55 (2): 402-406 (2015)Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement., , , , , , , , , and 2 other author(s). Microelectron. Reliab., 54 (4): 725-729 (2014)3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)., , , , , , , , , and 12 other author(s). ASICON, page 1137-1140. IEEE, (2017)Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries., , , , , , , , , and 1 other author(s). Microelectron. Reliab., (2017)Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack., , , , , , , and . Microelectron. Reliab., 48 (11-12): 1769-1771 (2008)Switching of 3300V Scaled IGBT by 5V Gate Drive., , , , , , , , , and 13 other author(s). ASICON, page 1-3. IEEE, (2019)Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing., , , , , , , and . Microelectron. Reliab., (2018)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT., , , , , , , , and . ESSDERC, page 107-110. IEEE, (2013)Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing., , , , , , and . IEICE Electron. Express, 3 (13): 316-321 (2006)