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Interface microstructure effects in Au thermosonic ball bonding contacts by high reliability wire materials.

, , , and . Microelectron. Reliab., 54 (9-10): 2000-2005 (2014)

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Physical failure analysis methods for wide band gap semiconductor devices., , , and . IRPS, page 3. IEEE, (2018)Immersive High Quality Communication., and . Eurographics (Short Presentations), Eurographics Association, (1998)Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress., , , , , , , and . IRPS, page 1-7. IEEE, (2021)Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications., , , , , , , , and . Microelectron. Reliab., (2017)Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures., , , , , , and . Microelectron. Reliab., (2016)Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology., , , , , , , and . Microelectron. Reliab., (2018)Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices., , , , , , and . IRPS, page 6. IEEE, (2018)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectron. Reliab., (2017)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , and . Microelectron. Reliab., 54 (9-10): 1785-1789 (2014)Degradation of 0.25 μm GaN HEMTs under high temperature stress test., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 55 (9-10): 1667-1671 (2015)