Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications., , , , , , , , and . Microelectron. Reliab., (2017)Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling., , , , , , , , , and 1 other author(s). IRPS, page 1-10. IEEE, (2020)New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis., , , , , , , , , and 1 other author(s). IRPS, page 1-9. IEEE, (2019)Physical failure analysis methods for wide band gap semiconductor devices., , , and . IRPS, page 3. IEEE, (2018)Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress., , , , , , , and . IRPS, page 1-7. IEEE, (2021)High resolution physical analysis of ohmic contact formation at GaN-HEMT devices., , , , , , , , , and . Microelectron. Reliab., (2017)Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures., , , and . Microelectron. Reliab., 54 (9-10): 1785-1789 (2014)Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy., , , , , and . Microelectron. Reliab., (2016)Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures., , , , , , and . Microelectron. Reliab., (2016)Novel techniques for dopant contrast analysis on real IC structures., , and . Microelectron. Reliab., 52 (9-10): 2098-2103 (2012)