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A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , и 1 other автор(ы). IEEE J. Solid State Circuits, 57 (12): 3582-3598 (2022)Architecture and Circuit Choices for 5G Millimeter-Wave Beamforming Transceivers., , , , , и . IEEE Communications Magazine, 56 (12): 186-192 (2018)A VTC/TDC-Assisted 4× Interleaved 3.8 GS/s 7b 6.0 mW SAR ADC With 13 GHz ERBW., , , , , , , , , и . IEEE J. Solid State Circuits, 58 (4): 972-982 (2023)A 128-Gb/s D-Band Receiver With Integrated PLL and ADC Achieving 1.95-pJ/b Efficiency in 22-nm FinFET., , , , , , , , , и 2 other автор(ы). IEEE J. Solid State Circuits, 58 (12): 3364-3379 (декабря 2023)A 128Gb/s 1.95pJ/b D-Band Receiver with Integrated PLL and ADC in 22nm FinFET., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 284-285. IEEE, (2023)A Scalable 71-to-76GHz 64-Element Phased-Array Transceiver Module with 2×2 Direct-Conversion IC in 22nm FinFET CMOS Technology., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 174-176. IEEE, (2019)A 6.0mW 3.8GS/s 7b VTC/TDC-Assisted Interleaved SAR ADC with 13GHz ERBW., , , , , , , , , и . VLSI Technology and Circuits, стр. 170-171. IEEE, (2022)A Fully Integrated 160Gb/s D-Band Transmitter with 1.1 pJ/b Efficiency in 22nm FinFET Technology., , , , , , , , , и 2 other автор(ы). ISSCC, стр. 78-80. IEEE, (2022)